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| (R) SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES M174 epoxy sealed ORDER CODE BRANDING SD2921-10 SD2921-10 DESCRIPTION The SD2921-10 is a gold metallized N-Channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2921 MOSFET, it is intended for use in 50V dc large signal applications up to 200 MHz. The SD2921-10 is mechanical compatible to the SD2921 but it offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistor for ISM applications. PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage T emperature Value 125 125 20 20 389 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 0.45 0.2 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/10 SD2921-10 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 100 mA VDS = 50 V V DS = 0 V ID = 250 mA ID = 10 A ID = 5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 4 411 198 27 2.0 Min. 125 5 5 5.0 3.0 Typ . Max. Un it V mA A V V mho pF pF pF REF. 1021305M DYNAMIC Symb ol P OUT G PS D f = 175 MHz f = 175 MHz f = 175 MHz Parameter V DD = 50 V V DD = 50 V V DD = 50 V I DQ = 250 mA P out = 150 W P out = 150 W P out = 150 W IDQ = 250 mA IDQ = 250 mA IDQ = 250 mA Min. 150 12.5 50 10:1 14 55 Typ . Max. Un it W dB % VSW R Load f = 175 MHz V DD = 50 V Mismatch All Phase Angles IMPEDANCE DATA FREQ . 30 MHz 175 MHz Z IN () 1.7 - j 5.7 1.2 - j 2.0 Z DL () 6.8 + j 0.9 2.0 + j 2.4 2/10 SD2921-10 TYPICAL PERFORMANCE Output Power vs Input Power Output Power vs Input Power 300 Vdd = 50V 250 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Tcase = -20C 200 Vdd = 40V 250 200 150 100 50 0 IDQ = 250 mA VDD = 50V f = 175MHz Tcase = 25C Tcase = 80C 150 100 50 0 1 4 7 10 13 16 19 Pin, INPUT POWER (W) Tc = 25C f = 175 MHz IDQ = 250mA 1 3 5 7 9 11 13 15 17 19 Pin, INPUT POWER (W) Output Power vs Supply Voltage Output Power vs Gate Voltage 200 Pout, OUTPUT POWER (WATTS) 200 Pin = 9W Pout, OUTPUT POWER (W) 150 Pin = 6W 150 VDD = 50V IDQ = 250mA f = 175MHz Pin = Constant T = -20 C T = 25 C 100 Pin = 3W 100 T = 80 C 50 IDQ = 250mA f = 175MHz 50 0 24 28 32 36 40 44 48 0 -3 -2 -1 0 1 2 3 VDD, SUPPLY VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) Capacitance vs Drain-Source Voltage Drain Current vs Gate Voltage 10000 15 ID, DRAIN CURRENT (A) C, CAPACITANCE(pF) T = -20C 1000 Ciss 10 T = 25C T = 80C 100 Crss Coss 5 VDS = 10V 10 0 10 20 30 40 VDS,DRAIN-SOURCE VOLTAGE (VOLTS) 50 0 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (VOLTS ) 3/10 SD2921-10 TYPICAL PERFORMANCE Gate-Source Voltages vs Case Temperature Output Power vs Gate Voltage 200 1.1 Tfl= 25C VGS, GATE-SOURCE VOLTAGE (NORMALIZED Pout, OUTPUT POWER (W) Tfl= -2 0C 1.05 Id = 5A 150 VDD= 50 V IDQ= 250 m A f = 30MHz FixedPin Tfl= 80C 1 0.95 0.9 VDS = 10V Id = 4A Id = 2A Id = 1A Id = .25A 100 50 Id = .1A 0.85 -25 0 25 50 75 100 0 0 1 2 3 4 VGS GATE-SOURCE VOLTAGE (V) 5 6 SC 13 21 0 Tc, CASE TEMPERATURE (C) Power Gain vs Output Power Output Power vs Input Power 26.5 Pout, OUTPUT POWER(W) 250 PG, POWER GAIN (dB) 200 VDD= 50 V 26 150 VDD= 40 V 25.5 100 25 f =30 MHz VDD= 50 V IDQ= 250 mA 50 f = 30 MHz IDQ= 250 m A 24.5 0 50 100 Pout, OUTPUT POWER (W) 150 200 SC13170 0 0.02 0.1 0.18 0.26 0.34 0.42 Pi n, INPUT POWER (W) 0.5 0.58 0.66 SC13180 Efficiency vs Output Power Output Power vs Voltage Supply 200 60 Pin= 0.6W Pout, OUTPUT POWER (W) Pin= 0.4W 150 Efficiency(%) 40 100 Pin= 0.2W 20 f= 30MHz VDD= 50 V IDQ= 250 mA 50 f = 30 MHz IDQ= 250 mA 0 0 50 100 Pout, OUTPUTPOWER (W) 150 200 SC13190 0 24 28 32 36 40 44 VDD, SU PPLY VOLTAGE (V) 48 SC1 32 00 4/10 SD2921-10 Maximum Thermal Resistance vs Case Temperature DC Safe Operating Area 100 0.75 50 30 20 RTH(j-c) (C/W) 0.7 0.65 Ids(A) 10 (1) 0.6 5 3 0.55 25 45 65 85 2 Tc, CASE TEMPERATURE (C) 1 1 2 5 10 20 50 100 200 Vds(V) (1) Current in this area may be limited by Rds(on) 5/10 SD2921-10 30 MHz Test Circuit Schematic (Engineering Test Circuit) VG + +50V 30 MHz Test Circuit Component Part List T1 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15" Long T2 1:4 Transformer, 50 ohm Flexible Coax .225 OD 15" Long FB1 Toroid, 1.7" OD .30" ID 220u 4 Turns FB2 Surface Mount EMI Shield Bead FB3 Toroid, 1.7" OD .300" ID 220u 3 Turns RFC1 Toroid, 0.5" OD 0.30" ID, 125u 4 turns 12 awg wire PCB 0.062" Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55 C1, C4, C6, C7, C8, 0.01 uF ATC Chip Cap C5 470 pF ATC Chip Cap C9, C11, C12, C13 0.01 uF ATC Chip Cap C10 10 uF 63V Electrolytic Capacitor C2, C3 750 pF ATC Chip Cap C14 100 uF 63V Electrolytic Capacitor R1, R3 1K ohm 1W Chip Resistor R2 680 ohm 3W Wirewound Resistor 6/10 SD2921-10 175 MHz Test Circuit Schematic (Production Test Circuit) VG +50V Note : All dimensions in inches REF. 1021579C 175 MHz Test Circuit Component Part List T1 T2 FB1 FB2, FB3 FB4 L1 PCB R1, R3 R2 C1, C11 C2 C3, C8, C9 C4 C5 C6 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6 " Long 1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6 " Long Toroid X 2, 0.5" OD .312" ID 850u 2 Turns VK200 Shield Bead, 1" OD 0.5" ID 850u 3 Turns 1/4Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12 " Long 0.062" Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55 470 ohm 1W Chip Resistor R4 20K ohm 10 Turn Potentiometer 360 ohm 1/2W Resistor R5 560 ohm 1W Resistor 470 pF ATC Chip Cap C7 30 pF ATC Chip Cap 43 pF ATC Chip Cap C10 91 pF ATC Chip Cap Arco 404, 12-65 pF C12, C15 1200 pF ATC Chip Cap Arco 423, 16-100 pF C13, C14 0.01 uF / 500V Chip Cap 120 pF ATC Chip Cap C16, C17 0.01 uF / 500V Chip Cap 0.01 uF ATC Chip Cap C18 10 uF 63V Electrolytic Capacitor 7/10 SD2921-10 175 MHz Test Circuit Photomaster 175 MHz Test Circuit 8/10 SD2921-10 M174 (.500 DIA 4L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F G H I J K L M 25.53 3.05 24.64 12.57 0.08 2.11 3.81 6.22 18.28 3.18 24.89 12.83 0.18 3.00 4.45 7.11 26.67 3.30 1.005 0.120 0.970 0.495 0.003 0.083 0.150 5.56 3.18 6.48 18.54 0.245 0.720 0.125 0.980 0.505 0.007 0.118 0.175 0.280 1.050 0.130 TYP. MAX. 5.84 MIN. 0.219 0.125 0.255 0.730 inch TYP. MAX. 0.230 DIM. Controlling Dimension in Inches 1011000D 9/10 SD2921-10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 10/10 |
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